Transistor-150 Datasheet | Specifications & PDF Download

2SC5200 ® Pb Free Plating Product 2SC5200 Pb 150 Watt Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU3150 Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Computer aided powe

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PTM15003T PTM15003T NPN Silicon Power Transistor 1.5 Amperes / 1.1 Watts Switch Mode series NPN silicon Power Transistor - High voltage, high speed p

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MS1504 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES W W W . Microsemi . COM The MS1504 is a 13.6 V

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NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P1504EDG TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 15mΩ ID

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Plastic-Encapsulate Transistors FEATURES • Complementary To KTC3875. • Excellent HFELinearity. • Low noise. KTA1504(PNP) Maximum Ratings (TA=25 Par

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Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-25M PH1214-25M Radar Pulsed Power Transistor - 25 Watts, 1.20-1

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2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed fo

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isc Silicon PNP Power Transistor MJE15033 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -250V(Min) ·DC current gain - : hFE = 50 (

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PH2729-150M Radar Pulsed Power Transistor—150 Watts 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features • • • • • • • • NPN Silicon Microwave Power Transisto

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MJ15022 (NPN), MJ15024 (NPN) Silicon Power Transistors The MJ15022 and MJ15024 are power transistors designed for high power audio, disk head positio

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MJE15030 (NPN) & MJE15031 (PNP) Silicon Complementary Transistors High Frequency Driver for Audio Amplifier TO−220 Type Package Description: The MJE1

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isc Silicon NPN Power Transistors MJ15024G DESCRIPTION ·Complement to Type PNP MJ15025 ·Excellent Safe Operating Area ·High DC current Gain ·Minimum

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isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 25(Min)@IC= 5A ·Wide Area of Safe Operation ·Complement to the PNP MJ15004

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Radar Pulsed Power Transistor 40 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-40M PH1214-40M Radar Pulsed Power Transistor - 40 Watts, 1.20-1

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Elektronische Bauelemente KTA1504 -0.15A , -50V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ15023/D Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transi

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www.DataSheet.co.kr Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn BU3150AF *Applications： ◆ ◆ Char

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