2SC5200 Datasheet, Transistors, Thinki Semiconductor

2SC5200 - NPN TRANSISTOR (Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi.

2SC5200 - NPN EPITAXIAL SILICON TRANSISTOR (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS  FEATURES * Remended for 100W High Fideli.

2SC5200 - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High.

2SC5200 - NPN Transistor (ON Semiconductor)
NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 Features • High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30 .

2SC5200 - NPN Transistor (STMicroelectronics)
2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t.

2SC5200 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V.

2SC5200A - Silicon NPN Transistor (JILIN SINO)
NPN Silicon NPN Triple Diffused Transistor R 2SC5200A  APPLICATIONS  Power Amplifier Applications ：VCEO=230V (min)  2SA1943A  100W （Ro.

2SC5200B - Silicon NPN Transistor (JILIN SINO)
NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z：VCEO=250V (min) z 2SA1943B z 100W z（RoHS） APPLICATIONS z Power Amplifier Application.

2SC5200H - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= .

2SC5200N - NPN Transistor (Toshiba)
Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V .