Datasheet4U Logo Datasheet4U.com

2SC5201 NPN TRANSISTOR

2SC5201 Description

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm * High breakdown volta.

2SC5201 Applications

* 2SC5201 Unit: mm
* High breakdown voltage: VCEO = 600 V
* Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage

📥 Download Datasheet

Preview of 2SC5201 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 2SC5200A - Silicon NPN Transistor (JILIN SINO)
  • 2SC5200B - Silicon NPN Transistor (JILIN SINO)
  • 2SC5200H - NPN Transistor (INCHANGE)
  • 2SC5200N - NPN Transistor (Toshiba)
  • 2SC5206 - Silicon NPN Transistor (Hitachi)
  • 2SC5207A - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SC5208 - Silicon NPN Transistor (Toshiba)
  • 2SC5209 - NPN TRANSISTOR (ETC)

📌 All Tags

NPN TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor 2SC5201-like datasheet