2SC5201 NPN TRANSISTOR

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm * High breakdown volta.

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Datasheet Specifications

Part number: 2SC5201
Manufacturer: Toshiba ↗ Semiconductor
File Size: 142.10 KB
Datasheet: 2SC5201_ToshibaSemiconductor.pdf
Description: NPN TRANSISTOR

Applications

* 2SC5201 Unit: mm
* High breakdown voltage: VCEO = 600 V
* Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage

2SC5201 Distributors

📁 Related Datasheet

2SC5200A 2SC5200B 2SC5200H 2SC5200N 2SC5206 2SC5207A

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2SC5201 NPN TRANSISTOR Toshiba Semiconductor

Toshiba Semiconductor 2SC5201-like datasheet