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2SC5200H - NPN Transistor

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Part number 2SC5200H
Manufacturer INCHANGE
File Size 212.78 KB
Description NPN Transistor
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Description

High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEB

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