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2SC5200H NPN Transistor

2SC5200H Description

isc Silicon NPN Power Transistor .
High Current Capability. High Power Dissipation. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). Minimum Lot-to-Lot.

2SC5200H Applications

* Power amplifier applications
* Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5

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Datasheet Details

Part number
2SC5200H
Manufacturer
INCHANGE
File Size
212.78 KB
Datasheet
2SC5200H-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC5200H-like datasheet