Part number:
2SC5206
Manufacturer:
Hitachi
File Size:
37.60 KB
Description:
Silicon npn transistor.
* High breakdown voltage VCBO = 500 V
* Isolated package TO-220FM Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2SC5206 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector pea
2SC5206
Hitachi
37.60 KB
Silicon npn transistor.
📁 Related Datasheet
2SC5200 - NPN TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
2SC5200
Unit: mm
• High breakdown voltage: VCEO = 230 V (mi.
2SC5200 - NPN EPITAXIAL SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SC5200
NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS
FEATURES
* Remended for 100W High Fideli.
2SC5200 - NPN Epitaxial Silicon Transistor
(Fairchild Semiconductor)
2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier
Features
• High.
2SC5200 - 150 Watt Silicon NPN Power Transistors
(Thinki Semiconductor)
2SC5200
®
Pb Free Plating Product
2SC5200
Pb
150 Watt Silicon NPN Power Transistors
DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943.
2SC5200 - NPN Transistor
(ON Semiconductor)
NPN Epitaxial Silicon Transistor
FJL4315, 2SC5200
Features
• High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30 .
2SC5200 - NPN Transistor
(STMicroelectronics)
2SC5200
High power NPN epitaxial planar bipolar transistor
Preliminary data
Features
■ High breakdown voltage VCEO = 230 V
■ Typical fT = 30 MHz
t.
2SC5200 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC5200
DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V.
2SC5200A - Silicon NPN Transistor
(JILIN SINO)
NPN Silicon NPN Triple Diffused Transistor
R
2SC5200A
APPLICATIONS
Power Amplifier Applications
：VCEO=230V (min) 2SA1943A 100W
（Ro.
