2SC5242 Datasheet - Toshiba Semiconductor

2SC5242 Silicon NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm High Collector breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1962 Suitable fro use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A B.

2SC5242_ToshibaSemiconductor.pdf