UF634-Q Datasheet | Specifications & PDF Download

CEDF634/CEUF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES 250V, 6.7A, RDS(ON) = 450mΩ @VGS = 10V. Super high dense cell design for e

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® BUF 634 BUF634 BUF 634 BUF 634 BUF6 34 250mA HIGH-SPEED BUFFER FEATURES q HIGH OUTPUT CURRENT: 250mA q SLEW RATE: 2000V/µs q PIN-SELECTED BANDWID

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BUF634 SBOS030C – AUGUST 2000 – REVISED MARCH 2024 BUF634 250mA High-Speed Buffer 1 Features • A newer version of this device is now available: BUF63

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BUF634A SBOS948F – FEBRUARY 2019 – REVISED MAY 2021 BUF634A 36-V, 210-MHz, 250-mA Output, High-Speed Buffer 1 Features • Pin-Selected Bandwidth: 35 M

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UNISONIC TECHNOLOGIES CO., LTD UF634-HC ADVANCED POWER MOSFET  DESCRIPTION The UTC UF634-HC is a N-channel Power MOSFET and it uses UTC advanced tech

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UNISONIC TECHNOLOGIES CO., LTD UF634-Q 8.1A, 250V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION These kinds of N-channel power MOSFET field effe

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UNISONIC TECHNOLOGIES CO., LTD UF634 ADVANCED POWER MOSFET  DESCRIPTION The UTC UF634 is a N-channel Power MOSFET and it uses UTC advanced technology

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