ULTRA-HIGH Datasheet | Specifications & PDF Download

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S-1000 Series www.sii-ic.com © Seiko Instruments Inc., 2004-2015 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR Rev.3.1_00 The S-1000 series i

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® STTA6006P STTA12006TV1/2 TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENE

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Si24R1 2.4GHz GFSK  2.4GHz ISM  ：GFSK/FSK  ：2Mbps/1Mbps/250Kbps  ：1uA  ：15uA  ：-83dBm @2Mbps  ：7dBm  （2Mbps）：15mA  (2Mbps): 12mA（0dBm)

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TOTAL POWER INT'L MAU200 Series1 Watt Ultra Miniature High Isolation SIP DC/DC Converters Single & Dual with Output Key Features l SMT Technology l Mi

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New Product UH4PBC, UH4PCC & UH4PDC Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile

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BP8522D Ultra-high Integration Off-line Switcher IC Description Features The BP8522D is a high performance, highly integrated ◼ Integrated VCC capa

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JW1985 Ultra-high Voltage Linear LED Driver Preliminary Specifications Subject to Change without Notice DESCRIPTION JW1985 is an ultra-high-voltage

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UG5xT, UGF5xT, UGB5xT www.vishay.com Vishay General Semiconductor High Voltage Ultrafast Rectifier FEATURES TO-220AC ITO-220AC • Power pack • Glass

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a FEATURES Ultrahigh Speed: Current Settling to 1 LSB in 90 ns for a Full-Scale Change in Digital Input. Voltage Settling to 1 LSB in 120 ns for a Ful

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a FEATURES 500 MHz Driver Operation (1 Gb/s) Driver Inhibit Function 100 ps Edge Matching Guaranteed Industry Specifications 20 ⍀ Output Impedance 5 V

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P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10

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DATA S H E E T MINIATURE SIGNAL RELAY ED2/EF2 SERIES Ultra-low power, compact and lightweight, High breakdown voltage, Surface mounting type DESCRI

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DATA S H E E T MINIATURE SIGNAL RELAY ED2/EF2 SERIES Ultra-low power, compact and lightweight, High breakdown voltage, Surface mounting type DESCRI

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DATA S H E E T MINIATURE SIGNAL RELAY ED2/EF2 SERIES Ultra-low power, compact and lightweight, High breakdown voltage, Surface mounting type DESCRI

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BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode BAV99 200 mA 70 V High Conductance Ultra-Fast Switching Diode Features • High Conduc

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P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (C

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FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industri

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® STTA206S TURBOSWITCH ™ A . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) www.DataSheet4U.com 2A 600V 20ns 1.5V A K VRRM tr

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