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VB60170G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com VB60170G-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A T.VB60170G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com VB60170G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS.