Part number:
VB60170G
Manufacturer:
File Size:
85.82 KB
Description:
Dual high-voltage trench mos barrier schottky rectifier.
Datasheet Details
VB60170G Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
Datasheet Details
VB60170G
85.82 KB
Dual high-voltage trench mos barrier schottky rectifier.
📁 Related Datasheet
VB60170G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB60100C Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB60100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB60120C Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB60 (VB Series) High Voltage Diffused Rectifiers (Micro Quality Semiconductor)
VB024 HIGH VOLTAGE IGNITION COIL DRIVER POWER IC (STMicroelectronics)
VB025BSP HIGH VOLTAGE IGNITION COIL DRIVER POWER IC (STMicroelectronics)
VB025SP HIGH VOLTAGE IGNITION COIL DRIVER POWER IC (STMicroelectronics)
VB60170G Distributor