VB60170G Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com VB60170G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS.

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Datasheet Specifications

Part number: VB60170G
Manufacturer: Vishay ↗
File Size: 85.82 KB
Datasheet: VB60170G-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 170 V 210 A 0.72 V 175 °C MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94

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VB60170G Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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