VB60100C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB60100C-M3
Manufacturer	Vishay
File Size	83.93 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB60100C-M3-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 VB60100C PIN 1 K PIN 2.

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Published: Aug 23, 2018 |