* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: For definitions of compliance pl
VB60100C-M3 Datasheet (83.93 KB)
VB60100C-M3
83.93 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com VB60100C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A T.
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