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VB60100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VB60100C-M3 Description

www.vishay.com VB60100C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A T.

VB60100C-M3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: For definitions of compliance pl

VB60100C-M3 Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Diode variation 2 x 30 A 100 V 320 A 0.66 V 150 °C Common cathod

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Datasheet Details

Part number
VB60100C-M3
Manufacturer
Vishay ↗
File Size
83.93 KB
Datasheet
VB60100C-M3-Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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