VB60100C - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB60100C
Manufacturer	Vishay
File Size	98.55 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB60100C-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Apr 18, 2016 |