VB60100C Datasheet - Vishay

VB60100C Dual High Voltage Trench MOS Barrier Schottky Rectifier

VB60100C Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Low thermal resistance

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

* Material categorization: for definitions of compliance pl

Datasheet Details

VB60100C

98.55 KB

Dual high voltage trench mos barrier schottky rectifier.

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