VB60120C - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB60120C
Manufacturer	Vishay
File Size	150.11 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB60120C-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 VB60120C Similar Datasheet

VB60 - (VB Series) High Voltage Diffused Rectifiers (Micro Quality Semiconductor)

Other Datasheets by Vishay

Published: May 4, 2020 |