VB60170G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB60170G-E3
Manufacturer	Vishay
File Size	99.99 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB60170G-E3-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: May 4, 2020 |