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VB60170G-E3 Datasheet - Vishay

VB60170G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VB60170G-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VB60170G-E3 Datasheet (99.99 KB)

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Datasheet Details

Part number:

VB60170G-E3

Manufacturer:

Vishay ↗

File Size:

99.99 KB

Description:

Dual high voltage trench mos barrier schottky rectifier.

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VB60170G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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