Part number:
VB60170G-E3
Manufacturer:
File Size:
99.99 KB
Description:
Dual high voltage trench mos barrier schottky rectifier
VB60170G-E3 Datasheet (99.99 KB)
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Vishay Semiconductors | VB60170G-E3-8W | DIODE ARR SCHOT 170V 30A TO263AB | DigiKey | 594 | 100 units |
$1.58
|
🛒 Buy Now |
VB60170G-E3 Datasheet (99.99 KB)
VB60170G-E3
99.99 KB
Dual high voltage trench mos barrier schottky rectifier
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
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