Datasheet Specifications
- Part number
- VB60170G-E3
- Manufacturer
- Vishay ↗
- File Size
- 99.99 KB
- Datasheet
- VB60170G-E3-Vishay.pdf
- Description
- Dual High Voltage Trench MOS Barrier Schottky Rectifier
Description
www.vishay.com VB60170G-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A T.Features
* Trench MOS Schottky technologyApplications
* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plVB60170G-E3 Distributors
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