XB6 Datasheet | Specifications & PDF Download

D15XB60 Bridge Diodes 600V, 15A Feature ・Compact SIP ・UL E142422 ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): 5S Equivalent circuit Ab

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August 2018 PRODUCT FEATURES □ High level of integration □ IGBT CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature c

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N-Channel Enhancement Mode Power MOSFET MXB6888 DESCRIPTION The MXB6888 is N-channel MOS Field Effect Transistor designed for high current switching a

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HCD-D690/XB6/XB600 SERVICE MANUAL US Model Canadian Model HCD-D690 AEP Model UK Model E Model Australian Model HCD-XB6 Mexican Model HCD-XB600 HCD-D

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LL25XB60 Bridge Diodes 600V, 25A Feature ・Compact SIP ・Low Noise ・Low VF ・UL E142422 ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): 5S Equ

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XB6566H ______________________________________ _____________________________________________ ______________________ _______ _ One Cell Lithium-ion/

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HCD-D690/XB6/XB600 SERVICE MANUAL US Model Canadian Model HCD-D690 AEP Model UK Model E Model Australian Model HCD-XB6 Mexican Model HCD-XB600 HCD-D

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September 2015 MMGT40H120XB6C 1200V 40A PIM Module Version 0 RoHS Compliant PRODUCT FEATURES □ High level of integration □ IGBT CHIP(Trench+Field

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February 2017 PRODUCT FEATURES □ High level of integration □ 600V IGBT3 CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive tempe

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June 2020 MMG25H120XB6TC Preliminary 1200V 25A PIM Module RoHS Compliant PRODUCT FEATURES □ Substrate for Low Thermal Resistance □ Low saturation

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November 2019 MMG15CB120XB6TC Version 01 1200V 15A PIM Module RoHS Compliant PRODUCT FEATURES □ IGBT CHIP(Trench+Field Stop technology) □ Substrat

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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 D20XB20 - D20XB60 SILICON BRIDGE RECTIFIERS PRV : 200 - 600 Volts Io : 20 Amperes

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July 2020 MMG50W120XB6TC Preliminary 1200V 50A PIM Module RoHS Compliant PRODUCT FEATURES □ High level of integration □ IGBT CHIP(Trench+Field Sto

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August 2018 PRODUCT FEATURES □ High level of integration □ IGBT CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature c

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February 2017 PRODUCT FEATURES □ High level of integration □ IGBT3 CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperatur

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November 2019 MMG25CE120XB6TC Version 01 1200V 25A PIM Module RoHS Compliant PRODUCT FEATURES □ Substrate for Low Thermal Resistance □ Low saturat

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May 2015 MMG75W120XB6TN 1200V 75A PIM Module Version 01 RoHS Compliant PRODUCT FEATURES □ High level of integration □ IGBT3 CHIP(Trench+Field Sto

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September 2015 MMGT100WD120XB6C 1200V 100A PIM Module Version 0 RoHS Compliant PRODUCT FEATURES □ High level of integration □ IGBT CHIP(Trench+Fi

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November 2019 MMGT10CB120XB6C Version 01 1200V 10A PIM Module RoHS Compliant PRODUCT FEATURES □ IGBT CHIP(Trench+Field Stop technology) □ Substrat

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D10XB60 Bridge Diodes 600V, 10A Feature ・Compact SIP ・UL E142422 ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): 3S Equivalent circuit Ab

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