ZXMN10B08E6 Datasheet | Specifications & PDF Download

Product Summary BVDSS 100V Max RDS(on) 230mΩ @ VGS = 10V 300mΩ @ VGS = 4.5V Max ID TA = +25C (Note 5) 1.9A 1.68A ZXMN10B08E6 100V N-CHANNEL ENHAN

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ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.230 DESCRIPTION ID = 1.9A This new generation of TRENCH MOS

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