Zetex Semiconductors Datasheet | Specifications & PDF Download

FET BIAS CONTROLLER DRAFT ISSUE A - DECEMBER 2000 DEVICE DESCRIPTION The ZNBR series of devices are designed to meet the bias requirements of GaAs and

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www.DataSheet4U.com ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET Summary Continuous drain source voltage VDS = 60V On

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ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.135⍀; ID=2.3A DESCRIPTION This new generation of high density M

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ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 o

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ZXFBF04 4 Channel Buffer Device DEVICE DESCRIPTION The ZXFBF04 is a low cost, high slew rate, quad buffer amplifier. Built using the Zetex CA700 techn

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ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.18⍀; ID=1.7A DESCRIPTION This new generation of high density MOSFETs

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ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC(cont) = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5

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www.DataSheet.co.kr ZXLD1320 Buck mode DC-DC converter for LED driving with 1.5A output and current control Description The ZXLD1320 is an inductive

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ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC(cont) = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Com

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PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 – APRIL 94 FEATURES * 40 Volt VCEO * Gain of 200 at IC=1 Amps * Very low saturation volta

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ZXFBF05 4 Channel Buffer Device with high capacitance load capability DEVICE DESCRIPTION The ZXFBF05 is a low cost, high slew rate, quad buffer amplif

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www.DataSheet4U.com ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.15 ; ID=2A DESCRIPTION This new

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ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS 100 RDS(on) (⍀) 0.125 @ VGS= 10V 0.150 @ VGS= 6V ID (A) 4 3.7 Description T

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Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (Ω) 0.200 @ VGS= 4.5

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www.DataSheet.co.kr A Product Line of Diodes Incorporated ZXLD1356 60V 550mA LED DRIVER with AEC-Q100 Description The ZXLD1356 is a continuous mode

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FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION ISSUE 1 - OCTOBER 1998 DEVICE DESCRIPTION The ZNBG series of devices are designed to m

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FET BIAS CONTROLLER DRAFT ISSUE A - DECEMBER 2000 DEVICE DESCRIPTION The ZNBR series of devices are designed to meet the bias requirements of GaAs and

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – FEBRUARY 1995 FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps

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PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Wa

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ZXRD1000 SERIES HIGH EFFICIENCY SIMPLESYNC PWM DC-DC CONTROLLERS DESCRIPTION The ZXRD1000 series provides complete control and protection functions

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