drain Datasheet | Specifications & PDF Download

3PEAK TP1945 / TP1946 / TP1948 1.8V Micropower, RRIO, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.

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3PEAK TP1945 / TP1946 / TP1948 1.8V Micropower, RRIO, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.

(260 views)

LMV331TP / LMV393TP General Purpose, 1.8V, RRI, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.5V  L

(260 views)

3PEAK TP1945 / TP1946 / TP1948 1.8V Micropower, RRIO, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.

(259 views)

LMV331TP / LMV393TP General Purpose, 1.8V, RRI, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.5V  L

(258 views)

9926A Common Drain N-Channel Enhancement Mode MOSFET z Features VDS VGS RDSon TYP ID 21mR@4V5 z Applications ¾ Li-ion battery protection ; ¾ Loa

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD87501L SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 CSD87501L

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M54HC09 M74HC09 QUAD 2-INPUT AND GATE (OPEN DRAIN) . . . . . . . . HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.)

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www.DataSheet4U.com AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8816 uses advanced trench t

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AOCA32317 30V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RSS(ON) • ESD protection • Common drain c

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MDWC0151ERH– Common-Drain Dual N-Channel Trench MOSFET 24V Datasheet MDWC0151ERH Common-Drain Dual N-Channel Trench MOSFET 24V, 22A, 2.8 mΩ General

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Primary lithium batteries G 06/2 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability AA - size spiral cell Benefits • High and stab

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Primary lithium batteries G 04/3 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability 1 /2 AA - size spiral cell Benefits • High and

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SMC3320W Common-Drain Dual N-Channel MOSFET ■DESCRIPTION SMC3320 is the Dual N-Channel enhancement mode power field effect transistors are using tre

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® 74V1G07 SINGLE BUFFER (OPEN DRAIN) PRELIMINARY DATA s s s s s s HIGH SPEED: tPD = 6.1 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA

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Primary lithium batteries G 26 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability D - size spiral cell Benefits • High and stable

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MDC0531E – Common-Drain N-channel Trench MOSFET 30V MDC0531E Common-Drain N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ General Description The MDC0531E u

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IDT74LVC07A 3.3V CMOS HEX BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS INDUSTRIAL TEMPERATURE RANGE 3.3V CMOS HEX BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS AND

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www.DataSheet4U.com 74V2T03 DUAL 2-INPUT OPEN DRAIN NAND GATE s s s s s s HIGH SPEED: tPD = 5.4ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC =

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www.DataSheet4U.com 74V2G03 DUAL 2-INPUT OPEN DRAIN NAND GATE s s s s s s HIGH SPEED: tPD = 3.9ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC =

(10 views)