| Part Number | Description | Manufacture |
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30V P-Channel MOSFET -4.7 -24 13 8 2.5 1.6 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 42 70 Maximum Junction-to-Lead Steady-State RqJL |
 Alpha & Omega Semiconductors |
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AM/FM PLL Frequency Synthesizer Support clock time base output • Serial data I/O — Support CCB format communication with the system controller. • Operating ranges — Supply voltage........................4.5 to 5.5 V — Operating temperature............ –40 to +85°C • Packages — DIP22 |
 Sanyo Semicon Device |
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slotted optical switch |
 QT Optoelectronics |
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2SK2131 |
 NEC |
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Programmable Dual Output LCD Bias a highly integrated step-up DC-DC converter with wide input voltage range from 2.7V to 5.5V. It is optimized for products powered by single-cell batteries (Li-Ion, Ni-Li, and Li-Polymer) and symmetrical output currents up to 80mA. An LDO and charge p |
 ORIENT-CHIP |
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PNP Silicon AF Transistor (For general AF application High collector current High current gain) 1.5 mm/6 cm2 Cu. Semiconductor Group 1 01.97 BCP 69 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-emitter breakdown |
 Siemens Semiconductor Group |
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2SD2131 ture, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upo |
 Toshiba |
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TV VERTICAL OUTPUT CIRCUIT • Low power consumption, direct deflection coil driving capability (Flyback voltage is two times as high as the supply voltage is supplied during flyback period only). • High breakdown voltage: 60V. ORDERING INFORMATION Device Package Operating Tempe |
 Samsung |
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General Purpose Transistors IN 6 EMITTER PIN 3 PNP Min Typ Max Unit ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Base Breakdown Voltage (IC = 100 mAdc) Collector – Emitter Breakdown Voltage (IC = 10 mAdc) |
 ON |
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Dual-In-Line Package Intelligent Power-Module 556) (1) TERMINAL (0.5) (3.556) (1.656) (0.5) TERMINAL CODE VUFS (UPG) VUFB VP1 (COM) UP VVFS (VPG) VVFB VP1 (COM) VP VWFS (WPG) VWFB VP1 (COM) WP (UNG) VNO(NC) UN VN WN FO CFO CIN VNC VN1 (WNG) (VNG) P U V W N (1) (1.778 × 26) (1.778) (6.25) (6.2 |
 Mitsubishi Electric Semiconductor |
| Total 106 results |
