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Mitsubishi Electric Semiconductor
RD06HVF1 - MOS FET type transistor specifically designed for VHF RF power amplifiers applications
www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 OUTLINE DRAWING RoHS Complianc.
KODENSHI KOREA
KK1207 - specifically designed
TECHNICAL www.DataSheet4U.com KK1207 DESCRIPTION The KK1207 is specifically designed for LED and LED DISPLAY derivers. The KK1207 have 12/9 segment.
Microchip Technology
TC59 - Low Dropout / Negative Output Voltage Regulator Designed Specifically
TC59 Low Dropout, Negative Output Voltage Regulator Features • Low Dropout Voltage - Typically 120mV @ 50mA; 380mV @ 100mA for -5.0V Output Part • Tig.
Polyfet RF Devices
PHM008 - The PHM008 is a dual stage amplifier specifically designed for Land Mobile
www.DataSheet4U.com polyfet rf devices Power RF Amplifiers Power = 3 Watts Bandwidth = 400 to 520 Mhz Gain = 24 dB Vdd = 7.5 Volts PHM008 50 ohms I.