RD06HVF1 Datasheet, Applications, Mitsubishi Electric Semiconductor

RD06HVF1 Features

• Applications High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 1 2 3 PINS 1:GATE 2:SOURCE 3:DRAIN

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RD06HVF1

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Mitsubishi Electric Semiconductor

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📄 Datasheet

Description:

Mos fet type transistor specifically designed for vhf rf power amplifiers applications. Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers a

RD06HVF1 Application

• Applications 4 FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3) APPLICATION For output stage of high power amplifiers in V

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