RD06HVF1 MOS FET type transistor specifically designed for VHF RF power amplifiers applications

Mitsubishi Electric Semiconductor

Description

www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 OUTLINE DRAWING RoHS Complianc.
Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

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Datasheet Specifications

Part number: RD06HVF1
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 541.43 KB
Datasheet: RD06HVF1_MitsubishiElectricSemiconductor.pdf
Description: MOS FET type transistor specifically designed for VHF RF power amplifiers applications

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RD06HVF1 MOS FET type transistor specifically designed for VHF power amplifiers applications Mitsubishi Electric Semiconductor

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