* High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 1 2 3 PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) note: (1)Torelance of no designation means typical value. Dimension in mm. (2) :Dipping area RoHS C
RD06HVF1 Datasheet (541.43 KB)
RD06HVF1
Mitsubishi Electric Semiconductor
541.43 KB
Mos fet type transistor specifically designed for vhf rf power amplifiers applications.
www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 OUTLINE DRAWING RoHS Complianc.
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