* High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 1 2 3 PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) note: (1)Torelance of no designation means typical value. Dimension in mm. (2) :Dipping area RoHS C
RD06HVF1 Datasheet (541.43 KB)
RD06HVF1
Mitsubishi Electric Semiconductor
541.43 KB
Mos fet type transistor specifically designed for vhf rf power amplifiers applications.
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
OUTLINE DRAWING
RoHS Complianc.
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