RD06HVF1 Features
* High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 1 2 3 PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) note: (1)Torelance of no designation means typical value. Dimension in mm. (2) :Dipping area RoHS C
RD06HVF1 Datasheet (541.43 KB)
Datasheet Details
RD06HVF1
Mitsubishi Electric Semiconductor
541.43 KB
Mos fet type transistor specifically designed for vhf rf power amplifiers applications.
📁 Related Datasheet
RD06HHF1 Silicon RF Power MOS FET (Mitsubishi Electric)
RD0605-D Solid State Relays (CARLO GAVAZZI)
RD00HHS1 RoHS Compliance (Mitsubishi Electric)
RD00HVS1 RoHS Compliance (Mitsubishi Electric)
RD0106T High-Speed Switching Diode (Sanyo Semicon Device)
RD01MUS1 Silicon RF Power MOS FET (Mitsubishi Electric)
RD01MUS2 Silicon MOSFET Power Transistor (Mitsubishi Electric)
RD01MUS2B Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
RD06HVF1 Distributor
