* High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ. 0.8 MIN 2.5+/-0.1 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.4+/-0.07
RD01MUS1 Datasheet (387.12 KB)
RD01MUS1
Mitsubishi Electric
387.12 KB
Silicon rf power mos fet.
www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9.
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