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RD01MUS1 Datasheet - Mitsubishi Electric

RD01MUS1 - Silicon RF Power MOS FET

RD01MUS1 Features

* High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ. 0.8 MIN 2.5+/-0.1 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.4+/-0.07

RD01MUS1_MitsubishiElectric.pdf

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Datasheet Details

Part number:

RD01MUS1

Manufacturer:

Mitsubishi Electric

File Size:

387.12 KB

Description:

Silicon rf power mos fet.

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