Part number: RD01MUS2B
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 3.81MB
Download: 📄 Datasheet
Description: Silicon MOSFET Power Transistor
*High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 TYPE NAME
0.8 MIN 2.5+/-0.1
4.4+/-0.1 1.6+/-0.1 LOT No.
1 0..
This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES
*High power gai.
RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES
*High power gain and High Efficiency. Pout 1..
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