RD01MUS2B - Silicon MOSFET Power Transistor

Mitsubishi Electric Semiconductor

Datasheet Details

Part number	RD01MUS2B
Manufacturer	Mitsubishi Electric Semiconductor
File Size	3.81 MB
Description	Silicon MOSFET Power Transistor
Datasheet	RD01MUS2B_MitsubishiElectricSemiconductor.pdf

RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 TYPE NAME 0.8 MIN 2.5+/-0.1 4.4+/-0.1 1.6+/-0.1 LOT No. 1 0. φ 1.5+/-0.1 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm @Vdd=7.2V,f=527MHz.
Integrated gate protection diode.

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Published: Nov 5, 2012 |