RD01MUS2B

Silicon MOSFET Power Transistor

Mitsubishi Electric Semiconductor

Image	Manufacturer	Part Number	B2B mpn	Description	Distributor	Stock	Quantity	Price	Buy Now
	Mitsubishi Electric	RD01MUS2B	RD01MUS2B-T513	RF-MOSFET 7.2V 527MHz 1.6W SOT89-Pkg. - Gate Prot	GLYN GmbH & Co. KG	3000	0	$0

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Datasheet Details

Part number:

RD01MUS2B

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

3.81 MB

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📄 Download RD01MUS2B Datasheet PDF

Description:

Silicon mosfet power transistor.
< Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor .
RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications..

✔ RD01MUS2B Features

High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 TYPE NAME 0.8 MIN 2.5+/-0.1 4.4+/-0.1 1.6+/-0.1 LOT No. 1 0. φ

✔ RD01MUS2B Application

This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES
High p

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RD01MUS2B Silicon MOSFET Power Transistor Mitsubishi Electric Semiconductor

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RD01MUS2B Distributor

Mitsubishi Electric

RD01MUS2B-T513

Win Source Electronics

240000 In Stock

Qty : 900 units

Unit Price : $0.5

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