RD02MUS1 - Silicon MOSFET Power Transistor
RD02MUS1 Features
* High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ.(175MHz) High Efficiency:65%typ.(520MHz) 2 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 For output stage of high power amplifiers In VHF/UHF band mobile radio sets. 0.9+/-0.1 APPLICATION Terminal No. 1.Drain (output)
