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RD02MUS1 Datasheet - Mitsubishi Electric

RD02MUS1 Silicon MOSFET Power Transistor

RD02MUS1 Features

* High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ.(175MHz) High Efficiency:65%typ.(520MHz) 2 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 For output stage of high power amplifiers In VHF/UHF band mobile radio sets. 0.9+/-0.1 APPLICATION Terminal No. 1.Drain (output)

RD02MUS1 Datasheet (275.40 KB)

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Datasheet Details

Part number:

RD02MUS1

Manufacturer:

Mitsubishi Electric

File Size:

275.40 KB

Description:

Silicon mosfet power transistor.

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RD02MUS1 Silicon MOSFET Power Transistor Mitsubishi Electric

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