* High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ.(175MHz) High Efficiency:65%typ.(520MHz) 2 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 For output stage of high power amplifiers In VHF/UHF band mobile radio sets. 0.9+/-0.1 APPLICATION Terminal No. 1.Drain (output)
RD02MUS1 Datasheet (275.40 KB)
RD02MUS1
Mitsubishi Electric
275.40 KB
Silicon mosfet power transistor.
www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1 0.2+/-0.05 (0.22) (0.22) (0.25).
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