Part number: RD02MUS1
Manufacturer: Mitsubishi Electric
File Size: 275.40KB
Download: 📄 Datasheet
Description: Silicon MOSFET Power Transistor
The RD02MUS1 is a silicon RF power transistor designed and manufactured by Mitsubishi Electric. It operates in the UHF frequency range and is commonly used in various applications such as FM transmitters, mobile radio systems, and other RF power amplification systems. With high power output and efficiency, the RD02MUS1 is a reliable component for amplifying RF signals in.
RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
OUTLINE
DRAWING
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
6.0+/-0.15
1
4.9+/-0.15 1.0+/-0.05
FEATURES
High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,.
High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ.(175MHz) High Efficiency:65%typ.(520MHz)
2
3
(0.25)
INDEX MARK (Gate)
0.2+/-0.05
F.
OUTLINE
DRAWING
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
6.0+/-0.15
1
4.9+/-0.15 1.0+/-0.05
FEATURES
High power gain: Pout.
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