* High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz
* High Efficiency:65%typ.(175MHz)
* High Efficiency:65%typ.(520MHz)
* Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (in
RD02MUS2 Datasheet (279.97 KB)
RD02MUS2
Mitsubishi Electric
279.97 KB
Rohs compliance.
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance,Sil.
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