Part number: RD02MUS2
Manufacturer: Mitsubishi Electric
File Size: 279.97KB
Download: 📄 Datasheet
Description: RoHS Compliance
*High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz
*High Efficiency:65%typ.(175MHz)
*High Efficiency:65%typ.(520MHz)
*Integrated gate protection.
This device have an interal monolithic zener diode from gate to source for ESD protection.
OUTLINE
DRAWING
4.6+/-0.05.
RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection.
OUTLINE
DRAWING
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
.
Image gallery
TAGS
📁 Related Datasheet
RD02MUS1 - Silicon MOSFET Power Transistor
(Mitsubishi Electric)
www..com
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
0.2+/-0.05
(0.22) (0.22) (0.25).
RD02MUS1B - Silicon MOSFET Power Transistor
(Mitsubishi Electric Semiconductor)
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING
4.6+/-0.05 3.3+/-0.
RD02LUS2 - Silicon RF Power MOS FET
(Mitsubishi)
< Silicon RF Power MOS FET (Discrete) >
RD02LUS2
RoHS Compliance, Silicon MOSFET Power Transistor 470MHz, 2W, 3.6V
DESCRIPTION
RD02LUS2 is a MOS FET .
RD00HHS1 - RoHS Compliance
(Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3
1.5+/-0.1
0..
RD00HVS1 - RoHS Compliance
(Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
4.4+/-0.1 1.6+/-0.1 LOT No.
3.9+/-0.3
RoHS Complian.
RD0106T - High-Speed Switching Diode
(Sanyo Semicon Device)
www.DataSheet.co.kr
Ordering number : ENA1704
RD0106T
SANYO Semiconductors
DATA SHEET
RD0106T
Features
• • • • •
Diffused Junction Silicon Diode.
RD01MUS1 - Silicon RF Power MOS FET
(Mitsubishi Electric)
www..com
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
4.4+/-0.1 1.6+/-0.1 LOT No.
3.9.
RD01MUS2 - Silicon MOSFET Power Transistor
(Mitsubishi Electric)
www..com
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
4.4+/-0.1 1.6+/-0.1 LOT No.
3.9.
RD01MUS2B - Silicon MOSFET Power Transistor
(Mitsubishi Electric Semiconductor)
< Silicon RF Power MOS FET (Discrete) >
RD01MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is.
RD030100 - Tubular Capacitors
(Vishay Siliconix)
RD 030100, RD 045120
Vishay Draloric
Tubular Capacitors, Screw & Band Mounting
RD 030100 7 KVP to 8 KVP
ø 45 (1.772 DIA)
7.4 + 0.2 Holes (0.291 + 0.0.
