RD02MUS2 Datasheet - Mitsubishi Electric

RD02MUS2, RoHS Compliance

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance,Sil.
RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

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Datasheet Details

Part number:

RD02MUS2

Manufacturer:

Mitsubishi Electric

File Size:

279.97 KB

Description:

RoHS Compliance

Features

* High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz
* High Efficiency:65%typ. (175MHz)
* High Efficiency:65%typ. (520MHz)
* Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (in

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RD02MUS2 RoHS Compliance Mitsubishi Electric

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