RD04LUS2 Datasheet, Mosfet, Mitsubishi

RD04LUS2 Features

• Mosfet High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=280mA, Pin=0.4W, f=527MHz Integrated gate protection diode. OUTLINE DRAWING APPLICATION For output

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RD04LUS2

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Mitsubishi

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📄 Datasheet

Description:

Silicon rf power mosfet. RD04LUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. FEATURES High power gain an

RD04LUS2 Application

• Applications FEATURES High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=280mA, Pin=0.4W, f=527MHz Integrated gat

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RD04LUS2

Mitsubishi

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