Part number:
RD04LUS2
Manufacturer:
Mitsubishi
File Size:
1.04 MB
Description:
Silicon rf power mosfet.
* High power gain and High Efficiency. Pout=4Wtyp, Drain Effi. =65%typ @ Vds=3.6V, Idq=280mA, Pin=0.4W, f=527MHz Integrated gate protection diode. OUTLINE DRAWING APPLICATION For output stage of high power amplifiers in VHF/UHF-band mobile radio sets. RoHS COMPLIANT RD04LUS2-501, T512, T514 is EU R
RD04LUS2
Mitsubishi
1.04 MB
Silicon rf power mosfet.
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