RD00HVS1

RoHS Compliance

Mitsubishi Electric

Image	Manufacturer	Part Number	B2B mpn	Description	Distributor	Stock	Quantity	Price	Buy Now
	Mitsubishi Electric	RD00HVS1	RD00HVS1-T113	POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET	Quest Components	2160	674 units	$2.7	🛒 Buy Now

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RD00HVS1 Datasheet Preview Page 1 — Preview of RD00HVS1 Datasheet

Datasheet Details

Part number:

RD00HVS1

Manufacturer:

Mitsubishi Electric

File Size:

176.33 KB

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📄 Download RD00HVS1 Datasheet PDF

Description:

Rohs compliance.
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 4..
RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. .

✔ RD00HVS1 Features

High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For

✔ RD00HVS1 Application

TYPE NAME 0.8 MIN 2.5+/-0.1 OUTLINE DRAWING 1.5+/-0.1 FEATURES High power gain Pout>0.5W, Gp>20dB @Vdd=12

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RD00HVS1 RoHS Compliance Mitsubishi Electric

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