Part number: RD00HVS1
Manufacturer: Mitsubishi Electric
File Size: 176.33KB
Download: 📄 Datasheet
Description: RoHS Compliance
RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
TYPE NAME
0.8 MIN 2.5+/-0.1
OUTLINE DRAWING
1.5+/-0.1
FEATURES
High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
1
2
1.5+/-0.1
3
1.5+/-0.1
.
High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
1
2
1.5+/-0.1
3
1.5+/-0.1
0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm
APPLICATION
For.
TYPE NAME
0.8 MIN 2.5+/-0.1
OUTLINE DRAWING
1.5+/-0.1
FEATURES
High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz.
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