* High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX RoHS COMPLIAN
RD00HVS1 Datasheet (176.33 KB)
RD00HVS1
Mitsubishi Electric
176.33 KB
Rohs compliance.
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 RoHS Complian.
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