Datasheet4U Logo Datasheet4U.com

RD00HVS1 Datasheet - Mitsubishi Electric

RD00HVS1 RoHS Compliance

RD00HVS1 Features

* High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX RoHS COMPLIAN

RD00HVS1 Datasheet (176.33 KB)

Preview of RD00HVS1 PDF
RD00HVS1 Datasheet Preview Page 2 RD00HVS1 Datasheet Preview Page 3

Datasheet Details

Part number:

RD00HVS1

Manufacturer:

Mitsubishi Electric

File Size:

176.33 KB

Description:

Rohs compliance.

📁 Related Datasheet

RD00HHS1 RoHS Compliance (Mitsubishi Electric)

RD0106T High-Speed Switching Diode (Sanyo Semicon Device)

RD01MUS1 Silicon RF Power MOS FET (Mitsubishi Electric)

RD01MUS2 Silicon MOSFET Power Transistor (Mitsubishi Electric)

RD01MUS2B Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)

RD02LUS2 Silicon RF Power MOS FET (Mitsubishi)

RD02MUS1 Silicon MOSFET Power Transistor (Mitsubishi Electric)

RD02MUS1B Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)

TAGS

RD00HVS1 RoHS Compliance Mitsubishi Electric

RD00HVS1 Distributor