RD04HMS2 Datasheet, Power Transistor, Mitsubishi Electric Semiconductor

Silicon mosfet power transistor

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Part number:

RD04HMS2

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

1.26 MB

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Description:

Silicon mosfet power transistor.
RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power 6.0+/-0.15 amp.

✔ RD04HMS2 Features

1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode 2 3 (0.25) (0.2

✔ RD04HMS2 Application

4.9+/-0.15 0.2+/-0.05 1 1.0+/-0.05 FEATURES 1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14d

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RD04HMS2 Silicon MOSFET Power Transistor Mitsubishi Electric Semiconductor