Part number:
RD04HMS2
Manufacturer:
Mitsubishi Electric Semiconductor
File Size:
1.26 MB
Description:
Silicon mosfet power transistor.
* 1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode 2 3 (0.25) (0.25) INDEX MARK (Gate) APPLICATION For output stage of high power amplifiers in VHF/ UHF/890-950MHz band mobile radio sets. 0.2+/
RD04HMS2
Mitsubishi Electric Semiconductor
1.26 MB
Silicon mosfet power transistor.
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