Part number:
RD04HMS2
Manufacturer:
Mitsubishi Electric Semiconductor
File Size:
1.26 MB
Description:
Silicon mosfet power transistor.
RD04HMS2_MitsubishiElectricSemiconductor.pdf
Datasheet Details
RD04HMS2 Features
* 1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode 2 3 (0.25) (0.25) INDEX MARK (Gate) APPLICATION For output stage of high power amplifiers in VHF/ UHF/890-950MHz band mobile radio sets. 0.2+/
RD04HMS2_MitsubishiElectricSemiconductor.pdf
Datasheet Details
RD04HMS2
Mitsubishi Electric Semiconductor
1.26 MB
Silicon mosfet power transistor.
📁 Related Datasheet
RD045120 Tubular Capacitors (Vishay Siliconix)
RD04LUS2 Silicon RF Power MOSFET (Mitsubishi)
RD00HHS1 RoHS Compliance (Mitsubishi Electric)
RD00HVS1 RoHS Compliance (Mitsubishi Electric)
RD0106T High-Speed Switching Diode (Sanyo Semicon Device)
RD01MUS1 Silicon RF Power MOS FET (Mitsubishi Electric)
RD01MUS2 Silicon MOSFET Power Transistor (Mitsubishi Electric)
RD01MUS2B Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
RD04HMS2 Distributor