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RD04HMS2 Datasheet - Mitsubishi Electric Semiconductor

RD04HMS2 - Silicon MOSFET Power Transistor

RD04HMS2 Features

* 1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode 2 3 (0.25) (0.25) INDEX MARK (Gate) APPLICATION For output stage of high power amplifiers in VHF/ UHF/890-950MHz band mobile radio sets. 0.2+/

RD04HMS2_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

RD04HMS2

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

1.26 MB

Description:

Silicon mosfet power transistor.

RD04HMS2 Distributor

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