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RD01MUS2 Datasheet - Mitsubishi Electric

RD01MUS2 - Silicon MOSFET Power Transistor

RD01MUS2 Features

* High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz

* High Efficiency: 65%typ.

* Integrated gate protection diode 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 APPLICATION For output sta

RD01MUS2_MitsubishiElectric.pdf

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Datasheet Details

Part number:

RD01MUS2

Manufacturer:

Mitsubishi Electric

File Size:

1.11 MB

Description:

Silicon mosfet power transistor.

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