RD01MUS2 - Silicon MOSFET Power Transistor

Mitsubishi Electric

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Datasheet Details

Part number	RD01MUS2
Manufacturer	Mitsubishi Electric
File Size	1.11 MB
Description	Silicon MOSFET Power Transistor
Datasheet	RD01MUS2_MitsubishiElectric.pdf

RD01MUS2 Product details

Description

Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.This device have an interal monolithic zener diode from gate to source for ESD protection.TYPE NAME 0.8 MIN 2.5+/-0.1

Features

High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz.
High Efficiency: 65%typ.
Integrated gate protection diode 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07.

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Published: Feb 21, 2007 |