* High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
* High Efficiency: 65%typ.
* Integrated gate protection diode 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 APPLICATION For output sta
RD01MUS2
Mitsubishi Electric
1.11 MB
Silicon mosfet power transistor.
www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9.
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