Part number:
RD00HHS1
Manufacturer:
Mitsubishi Electric
File Size:
159.07 KB
Description:
Rohs compliance.
RD00HHS1 Features
* High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz 0.8 MIN 2.5+/-0.1 1 2 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX RoHS COMPLIAN
RD00HHS1 Datasheet (159.07 KB)
Datasheet Details
RD00HHS1
Mitsubishi Electric
159.07 KB
Rohs compliance.
📁 Related Datasheet
RD00HVS1 RoHS Compliance (Mitsubishi Electric)
RD0106T High-Speed Switching Diode (Sanyo Semicon Device)
RD01MUS1 Silicon RF Power MOS FET (Mitsubishi Electric)
RD01MUS2 Silicon MOSFET Power Transistor (Mitsubishi Electric)
RD01MUS2B Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
RD02LUS2 Silicon RF Power MOS FET (Mitsubishi)
RD02MUS1 Silicon MOSFET Power Transistor (Mitsubishi Electric)
RD02MUS1B Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
RD00HHS1 Distributor