Datasheet4U Logo Datasheet4U.com

RD00HHS1 Datasheet - Mitsubishi Electric

RoHS Compliance

RD00HHS1 Features

* High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz 0.8 MIN 2.5+/-0.1 1 2 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX RoHS COMPLIAN

RD00HHS1 Datasheet (159.07 KB)

Preview of RD00HHS1 PDF

Datasheet Details

Part number:

RD00HHS1

Manufacturer:

Mitsubishi Electric

File Size:

159.07 KB

Description:

Rohs compliance.
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3 1.5+/-0.1 0..

📁 Related Datasheet

RD00HVS1 RoHS Compliance (Mitsubishi Electric)

RD0106T High-Speed Switching Diode (Sanyo Semicon Device)

RD01MUS1 Silicon RF Power MOS FET (Mitsubishi Electric)

RD01MUS2 Silicon MOSFET Power Transistor (Mitsubishi Electric)

RD01MUS2B Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)

RD02LUS2 Silicon RF Power MOS FET (Mitsubishi)

RD02MUS1 Silicon MOSFET Power Transistor (Mitsubishi Electric)

RD02MUS1B Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)

RD02MUS2 RoHS Compliance (Mitsubishi Electric)

RD030100 Tubular Capacitors (Vishay Siliconix)

TAGS

RD00HHS1 RoHS Compliance Mitsubishi Electric

Image Gallery

RD00HHS1 Datasheet Preview Page 2 RD00HHS1 Datasheet Preview Page 3

RD00HHS1 Distributor