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RD02LUS2 Datasheet - Mitsubishi

RD02LUS2 - Silicon RF Power MOS FET

RD02LUS2 Features

* 1.High Power Gain and High Efficiency Pout>2.0W, Gp=10dB, Drain Effi. =60%typ @ f=470MHz, VDS=3.6V, Idq=140mA, Pin=0.2W 2.Integrated gate protection diode APPLICATION For driver stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANT RD02LUS2-501, T513 is EU RoHS compliant

RD02LUS2-Mitsubishi.pdf

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Datasheet Details

Part number:

RD02LUS2

Manufacturer:

Mitsubishi

File Size:

1.66 MB

Description:

Silicon rf power mos fet.

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