RD02MUS1B

Silicon MOSFET Power Transistor

Mitsubishi Electric Semiconductor

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Datasheet Details

Part number:

RD02MUS1B

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

492.75 KB

Description:

Silicon mosfet power transistor.
< Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 1.
< Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor .

✔ RD02MUS1B Features

High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Dr

✔ RD02MUS1B Application

RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure. 6.0+/-0.15 0.2+/-0.05 1 4

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RD02MUS1B Silicon MOSFET Power Transistor Mitsubishi Electric Semiconductor

Datasheet Details

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Description:

✔ RD02MUS1B Features

✔ RD02MUS1B Application

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