RD02MUS1B Datasheet - Mitsubishi Electric Semiconductor

RD02MUS1B Silicon MOSFET Power Transistor

< Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation In.

RD02MUS1B Features

* High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm www.DataSheet.net/ APPLICATION For output stage of high

RD02MUS1B_MitsubishiElectricSemiconductor.pdf