Part number:
RD02MUS1B
Manufacturer:
Mitsubishi Electric Semiconductor
File Size:
492.75 KB
Description:
Silicon mosfet power transistor.
RD02MUS1B_MitsubishiElectricSemiconductor.pdf
Datasheet Details
< Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation In
RD02MUS1B Features
* High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm www.DataSheet.net/ APPLICATION For output stage of high
RD02MUS1B_MitsubishiElectricSemiconductor.pdf
Datasheet Details
RD02MUS1B
Mitsubishi Electric Semiconductor
492.75 KB
Silicon mosfet power transistor.
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