* High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm www.DataSheet.net/ APPLICATION For output stage of high
RD02MUS1B Datasheet (492.75 KB)
RD02MUS1B
Mitsubishi Electric Semiconductor
492.75 KB
Silicon mosfet power transistor.
< Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.
📁 Related Datasheet
RD02MUS1 Silicon MOSFET Power Transistor (Mitsubishi Electric)
RD02MUS2 RoHS Compliance (Mitsubishi Electric)
RD02LUS2 Silicon RF Power MOS FET (Mitsubishi)
RD00HHS1 RoHS Compliance (Mitsubishi Electric)
RD00HVS1 RoHS Compliance (Mitsubishi Electric)
RD0106T High-Speed Switching Diode (Sanyo Semicon Device)
RD01MUS1 Silicon RF Power MOS FET (Mitsubishi Electric)
RD01MUS2 Silicon MOSFET Power Transistor (Mitsubishi Electric)
RD01MUS2B Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
RD030100 Tubular Capacitors (Vishay Siliconix)
