RD02MUS1B - Silicon MOSFET Power Transistor

Mitsubishi Electric Semiconductor

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Datasheet Details

Part number	RD02MUS1B
Manufacturer	Mitsubishi Electric Semiconductor
File Size	492.75 KB
Description	Silicon MOSFET Power Transistor
Datasheet	RD02MUS1B_MitsubishiElectricSemiconductor.pdf

RD02MUS1B Product details

Description

< Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction temperature Storage temperature Thermal resistance Junction to case Vgs=0V Vds=0V Tc=25°C Zg=Zl=50 CONDITIONS RATINGS 30 +/-20 21.9 0.1 1.5 150 -40 to +125 5.7 UNIT V

Features

High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm www. DataSheet. net/.

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Published: Nov 5, 2012 |