* High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz
* High Efficiency: 60%typ. (175MHz)
* High Efficiency: 55%typ. (520MHz)
* Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile rad
RD07MVS2 Datasheet (273.14 KB)
RD07MVS2
Mitsubishi Electric Semiconductor
273.14 KB
Silicon mosfet power transistor.
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS2
0.2+/-0.05
(0.22) (0.22) (0.25).
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