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RD07MVS2 Silicon MOSFET Power Transistor

RD07MVS2 Description

www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 0.2+/-0.05 (0.22) (0.22) (0.25).
OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

RD07MVS2 Features

* High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz
* High Efficiency: 60%typ. (175MHz)
* High Efficiency: 55%typ. (520MHz)

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