RD07MVS2 Datasheet - Mitsubishi Electric Semiconductor

RD07MVS2 Silicon MOSFET Power Transistor

RD07MVS2 Features

* High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz

* High Efficiency: 60%typ. (175MHz)

* High Efficiency: 55%typ. (520MHz)

* Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile rad

Datasheet Details

RD07MVS2

Mitsubishi Electric Semiconductor

273.14 KB

Silicon mosfet power transistor.

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