RD07MVS2 Datasheet, Transistor, Mitsubishi Electric Semiconductor

RD07MVS2 Features

• Transistor
• High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz
• High Efficiency: 60%typ. (175MHz)
• High Efficiency: 55%typ. (520MHz)
• Integrated gate protection d

PDF File Details

Part number:

RD07MVS2

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

273.14kb

Download:

📄 Datasheet

Description:

Silicon mosfet power transistor. OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. 6.0+/-0.

RD07MVS2 Application

• Applications 6.0+/-0.15 This device have an interal monolithic zener diode from gate to source for ESD protection. 4.9+/-0.15 4.6+/-0.05 3.3+/-0.0

TAGS

RD07MVS2

Mitsubishi Electric Semiconductor

📁 Related Datasheet

RD07MVS1 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 0.2+/-0.05 (0.22) Silicon MOSFET Power Transistor,1.

RD07MVS1B - Silicon RF Power MOSFET (Mitsubishi Electric Semiconductor)
< Silicon RF Power MOS FET (Discrete) > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION RD07.

RD07MUS2B - Silicon RF Power MOSFET (Mitsubishi Electric Semiconductor)
< Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING 6.0+/-0.15.

RD00HHS1 - RoHS Compliance (Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3 1.5+/-0.1 0..

RD00HVS1 - RoHS Compliance (Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 RoHS Complian.

RD0106T - High-Speed Switching Diode (Sanyo Semicon Device)
.DataSheet.co.kr Ordering number : ENA1704 RD0106T SANYO Semiconductors DATA SHEET RD0106T Features • • • • • Diffused Junction Silicon Diode.

RD01MUS1 - Silicon RF Power MOS FET (Mitsubishi Electric)
.. MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9.

RD01MUS2 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
.. MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9.

RD01MUS2B - Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
< Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is.

RD02LUS2 - Silicon RF Power MOS FET (Mitsubishi)
< Silicon RF Power MOS FET (Discrete) > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz, 2W, 3.6V DESCRIPTION RD02LUS2 is a MOS FET .