* High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz
* High Efficiency: 60%typ. (175MHz)
* High Efficiency: 55%typ. (520MHz)
* Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile rad
RD07MVS2 Datasheet (273.14 KB)
RD07MVS2
Mitsubishi Electric Semiconductor
273.14 KB
Silicon mosfet power transistor.
www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 0.2+/-0.05 (0.22) (0.22) (0.25).
📁 Related Datasheet
RD07MVS1 Silicon MOSFET Power Transistor (Mitsubishi Electric)
RD07MVS1B Silicon RF Power MOSFET (Mitsubishi Electric Semiconductor)
RD07MUS2B Silicon RF Power MOSFET (Mitsubishi Electric Semiconductor)
RD00HHS1 RoHS Compliance (Mitsubishi Electric)
RD00HVS1 RoHS Compliance (Mitsubishi Electric)
RD0106T High-Speed Switching Diode (Sanyo Semicon Device)
RD01MUS1 Silicon RF Power MOS FET (Mitsubishi Electric)
RD01MUS2 Silicon MOSFET Power Transistor (Mitsubishi Electric)
RD01MUS2B Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
RD02LUS2 Silicon RF Power MOS FET (Mitsubishi)
