RD07MVS1B Datasheet - Mitsubishi Electric Semiconductor

Silicon RF Power MOSFET

RD07MVS1B Features

* Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz) www.DataSheet.net/ 0.2+/-0.05 0.9+/-0.1 High power gain: Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm APPLICATION For output stage of high power a

RD07MVS1B General Description

RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power 4.9+/-0.15 1.0+/-0.05 6.0+/-0.15 0.2+/-0.05 amplifiers applications. RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure. 1 2 3.5+/-0.05 Datasheet pdf - http://www.DataSheet4U.co.kr/ 3 IN.

RD07MVS1B Datasheet (299.83 KB)

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Part number:

RD07MVS1B

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

299.83 KB

Description:

Silicon rf power mosfet.

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RD07MVS1B Silicon Power MOSFET Mitsubishi Electric Semiconductor

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RD07MVS1B Features

RD07MVS1B General Description

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