RD07MVS1B Datasheet, Mosfet, Mitsubishi Electric Semiconductor

RD07MVS1B Features

• Mosfet Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz) www.DataSheet.net/ 0.2+/-0.05 0.9+/-0.1 High power gain: Terminal No. 1.Drain

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Part number:

RD07MVS1B

Manufacturer:

Mitsubishi Electric Semiconductor

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299.83kb

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📄 Datasheet

Description:

Silicon rf power mosfet. RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power 4.9+/-0.15 1.0+/-0.05 6.0+/-0.15 0.2+/-0.05 ampl

RD07MVS1B Application

• Applications RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure. 1 2 3.5+/-0.05 Datasheet pdf - http://www.DataSheet4U.

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RD07MVS1B

Mitsubishi Electric Semiconductor

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