Datasheet4U Logo Datasheet4U.com

RD07MVS1B - Silicon RF Power MOSFET

Description

amplifiers applications.

RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.

Features

  • Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz) www. DataSheet. net/ 0.2+/-0.05 0.9+/-0.1 High power gain: Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm.

📥 Download Datasheet

Datasheet preview – RD07MVS1B

Datasheet Details

Part number RD07MVS1B
Manufacturer Mitsubishi Electric Semiconductor
File Size 299.83 KB
Description Silicon RF Power MOSFET
Datasheet download datasheet RD07MVS1B Datasheet
Additional preview pages of the RD07MVS1B datasheet.

📁 Similar Datasheet

  • RD07MVS1 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
  • RD00HHS1 - RoHS Compliance (Mitsubishi Electric)
  • RD00HVS1 - RoHS Compliance (Mitsubishi Electric)
  • RD0106T - High-Speed Switching Diode (Sanyo Semicon Device)
  • RD01MUS1 - Silicon RF Power MOS FET (Mitsubishi Electric)
  • RD01MUS2 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
  • RD02LUS2 - Silicon RF Power MOS FET (Mitsubishi)
  • RD02MUS1 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
  • RD02MUS2 - RoHS Compliance (Mitsubishi Electric)
  • RD030100 - Tubular Capacitors (Vishay Siliconix)
Other Datasheets by Mitsubishi Electric Semiconductor
  • RD07MVS2 - Silicon MOSFET Power Transistor
  • RD07MUS2B - Silicon RF Power MOSFET
  • RD01MUS2B - Silicon MOSFET Power Transistor
  • RD02MUS1B - Silicon MOSFET Power Transistor
  • RD04HMS2 - Silicon MOSFET Power Transistor
  • RD06HVF1 - MOS FET type transistor specifically designed for VHF RF power amplifiers applications

Full PDF Text Transcription

Click to expand full text
< Silicon RF Power MOS FET (Discrete) > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power 4.9+/-0.15 1.0+/-0.05 6.0+/-0.15 0.2+/-0.05 amplifiers applications. RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure. 1 2 3.5+/-0.05 Datasheet pdf - http://www.DataSheet4U.co.kr/ 3 INDEX MARK (Gate) (0.22) (0.25) (0.25) FEATURES Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz) www.DataSheet.net/ 0.2+/-0.05 0.9+/-0.1 High power gain: Terminal No. 1.Drain (output) 2.Source (GND) 3.
Published: |