RD07MVS1B - Silicon RF Power MOSFET

Mitsubishi Electric Semiconductor

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Datasheet Details

Part number	RD07MVS1B
Manufacturer	Mitsubishi Electric Semiconductor
File Size	299.83 KB
Description	Silicon RF Power MOSFET
Datasheet	RD07MVS1B_MitsubishiElectricSemiconductor.pdf

RD07MVS1B Product details

Description

RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power 4.9+/-0.15 1.0+/-0.05 6.0+/-0.15 0.2+/-0.05 amplifiers applications.RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.1 2 3.5+/-0.05 Datasheet pdf - http://www.DataSheet4U.co.kr/ 3 INDEX MARK (Gate) (0.22) (0.25) (0.25)

Features

Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz) www. DataSheet. net/ 0.2+/-0.05 0.9+/-0.1 High power gain: Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm.

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Published: Nov 5, 2012 |