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RD04HMS2 Datasheet Silicon MOSFET Power Transistor

Manufacturer: Mitsubishi Electric

Overview: < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS pliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz,.

General Description

RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power 6.0+/-0.15 amplifiers applications.

4.9+/-0.15 0.2+/-0.05 1 1.0+/-0.05

Key Features

  • 1. High Power gain and High Efficiency Pout=5.0Wtyp. , Gp=14dBtyp. Drain Effi. =53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode 2 3 (0.25) (0.25) INDEX MARK (Gate).

RD04HMS2 Distributor