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RD04HMS2 - Silicon MOSFET Power Transistor

General Description

RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power 6.0+/-0.15 amplifiers applications.

Key Features

  • 1. High Power gain and High Efficiency Pout=5.0Wtyp. , Gp=14dBtyp. Drain Effi. =53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode 2 3 (0.25) (0.25) INDEX MARK (Gate).

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Full PDF Text Transcription (Reference)

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< Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power 6.0+/-0.15 amplifiers applications. 4.9+/-0.15 0.2+/-0.05 1 1.0+/-0.05 FEATURES 1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode 2 3 (0.25) (0.25) INDEX MARK (Gate) APPLICATION For output stage of high power amplifiers in VHF/ UHF/890-950MHz band mobile radio sets. 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm RoHS COMPLIANT RD04HMS2 is a RoHS compliant product.