RD07MVS1 Datasheet, Transistor, Mitsubishi Electric

RD07MVS1 Features

• Transistor MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Vgs-Ids CHARACTERISTICS 10.0 8.0 6.0 4.0 2.0 0.0 Ta=+25°C Vds=10V Silicon MOSFET Powe

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Part number:

RD07MVS1

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Mitsubishi Electric

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📄 Datasheet

Description:

Silicon mosfet power transistor. RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING 6.0+/-0.15

RD07MVS1 Application

• Applications OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05
• High power gain: Pout>7W, Gp>10dB@Vdd=7

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RD07MVS1

Mitsubishi Electric

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