RD07MVS1 Datasheet - Mitsubishi Electric

RD07MVS1 Silicon MOSFET Power Transistor

RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05 *High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz *High Efficiency: 60%typ. (175MHz) .

RD07MVS1 Features

* MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Vgs-Ids CHARACTERISTICS 10.0 8.0 6.0 4.0 2.0 0.0 Ta=+25°C Vds=10V Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE

* 1:The material

RD07MVS1 Datasheet (245.00 KB)