RD07MVS1

Silicon MOSFET Power Transistor

Mitsubishi Electric

RD07MVS1 Features

* MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Vgs-Ids CHARACTERISTICS 10.0 8.0 6.0 4.0 2.0 0.0 Ta=+25°C Vds=10V Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE

* 1:The material

RD07MVS1 General Description

RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05

*High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz

*High Efficiency: 60%typ. (175MHz)
.

RD07MVS1 Datasheet (245.00 KB)

RD07MVS1 Datasheet Preview — Preview of RD07MVS1 PDF

Datasheet Details

Part number:

RD07MVS1

Manufacturer:

Mitsubishi Electric

File Size:

245.00 KB

Description:

Silicon mosfet power transistor.
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 0.2+/-0.05 (0.22) Silicon MOSFET Power Transistor,1.

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RD07MVS1 Silicon MOSFET Power Transistor Mitsubishi Electric

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RD07MVS1 Features

RD07MVS1 General Description

Datasheet Details

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