Datasheet Details
Part number:
RD07MVS1
Manufacturer:
Mitsubishi Electric
File Size:
245.00 KB
Description:
Silicon mosfet power transistor.
RD07MVS1_MitsubishiElectric.pdf
Datasheet Details
Part number:
RD07MVS1
Manufacturer:
Mitsubishi Electric
File Size:
245.00 KB
Description:
Silicon mosfet power transistor.
RD07MVS1, Silicon MOSFET Power Transistor
RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05 *High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz *High Efficiency: 60%typ.
(175MHz)
RD07MVS1 Features
* MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Vgs-Ids CHARACTERISTICS 10.0 8.0 6.0 4.0 2.0 0.0 Ta=+25°C Vds=10V Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
* 1:The material
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