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RD07MVS1 Silicon MOSFET Power Transistor

RD07MVS1 Description

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 0.2+/-0.05 (0.22) Silicon MOSFET Power Transistor,1.
RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD07MVS1 Features

* MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Vgs-Ids CHARACTERISTICS 10.0 8.0 6.0 4.0 2.0 0.0 Ta=+25°C Vds=10V Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
* 1:The material

RD07MVS1 Applications

* OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05
* High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
* High Efficiency: 60%typ. (175MHz)
* High Efficiency: 55%typ. (520MHz) 2 APPLICATION For output stage of high power amplifiers in VHF/U

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Datasheet Details

Part number
RD07MVS1
Manufacturer
Mitsubishi Electric
File Size
245.00 KB
Datasheet
RD07MVS1_MitsubishiElectric.pdf
Description
Silicon MOSFET Power Transistor

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Silicon MOSFET Power Transistor Mitsubishi Electric
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