* High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. 3 (0.25) (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value
RD07MUS2B Datasheet (689.20 KB)
RD07MUS2B
Mitsubishi Electric Semiconductor
689.20 KB
Silicon rf power mosfet.
< Silicon RF Power MOS FET (Discrete) >
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING
6.0+/-0.15.
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