RD07MUS2B Datasheet, Mosfet, Mitsubishi Electric Semiconductor

RD07MUS2B Features

• Mosfet High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. 3 (0.25) (0.25) INDEX MA

PDF File Details

Part number:

RD07MUS2B

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

689.20kb

Download:

📄 Datasheet

Description:

Silicon rf power mosfet. RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 4.6+/-0.05 3.3+/-0

RD07MUS2B Application

• Applications 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05 2 FEATURES High power gain and High Efficiency. Typical Po Gp ηD (175MHz)

TAGS

RD07MUS2B

Mitsubishi Electric Semiconductor

📁 Related Datasheet

RD07MVS1 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 0.2+/-0.05 (0.22) Silicon MOSFET Power Transistor,1.

RD07MVS1B - Silicon RF Power MOSFET (Mitsubishi Electric Semiconductor)
< Silicon RF Power MOS FET (Discrete) > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION RD07.

RD07MVS2 - Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
.. MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 0.2+/-0.05 (0.22) (0.22) (0.25).

RD00HHS1 - RoHS Compliance (Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3 1.5+/-0.1 0..

RD00HVS1 - RoHS Compliance (Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 RoHS Complian.

RD0106T - High-Speed Switching Diode (Sanyo Semicon Device)
.DataSheet.co.kr Ordering number : ENA1704 RD0106T SANYO Semiconductors DATA SHEET RD0106T Features • • • • • Diffused Junction Silicon Diode.

RD01MUS1 - Silicon RF Power MOS FET (Mitsubishi Electric)
.. MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9.

RD01MUS2 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
.. MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9.

RD01MUS2B - Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
< Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is.

RD02LUS2 - Silicon RF Power MOS FET (Mitsubishi)
< Silicon RF Power MOS FET (Discrete) > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz, 2W, 3.6V DESCRIPTION RD02LUS2 is a MOS FET .