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RD07MUS2B Datasheet - Mitsubishi Electric Semiconductor

RD07MUS2B Silicon RF Power MOSFET

RD07MUS2B Features

* High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. 3 (0.25) (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value

RD07MUS2B Datasheet (689.20 KB)

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Datasheet Details

Part number:

RD07MUS2B

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

689.20 KB

Description:

Silicon rf power mosfet.

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RD07MUS2B Silicon Power MOSFET Mitsubishi Electric Semiconductor

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