RD07MUS2B - Silicon RF Power MOSFET

Mitsubishi Electric Semiconductor

Datasheet Details

Part number	RD07MUS2B
Manufacturer	Mitsubishi Electric Semiconductor
File Size	689.20 KB
Description	Silicon RF Power MOSFET
Datasheet	RD07MUS2B_MitsubishiElectricSemiconductor.pdf

RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. 3 (0.25) (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm.

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Published: Nov 5, 2012 |