RD07MUS2B Silicon RF Power MOSFET

Mitsubishi Electric Semiconductor

Description

< Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING 6.0+/-0.15.
RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

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Datasheet Specifications

Part number: RD07MUS2B
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 689.20 KB
Datasheet: RD07MUS2B_MitsubishiElectricSemiconductor.pdf
Description: Silicon RF Power MOSFET

Features

* High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. 3 (0.25) (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value

RD07MUS2B Distributors

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RD07MUS2B Silicon Power MOSFET Mitsubishi Electric Semiconductor

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