RD05MMP1 Datasheet, Fet, Mitsubishi Electric

RD05MMP1 Features

• Fet
• High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
• High Efficiency: 43%min. (941MHz)
• No gate protection diode INDEX MARK [Gate] (4.5) 0.95+/-0.2 2.6+/-

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Part number:

RD05MMP1

Manufacturer:

Mitsubishi Electric

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📄 Datasheet

Description:

Silicon rf power mos fet. RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. (3.6) OUTLINE DRAWING (d) FE

RD05MMP1 Application

• Applications (3.6) OUTLINE DRAWING (d) FEATURES
• High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
• High Efficiency: 43%min

TAGS

RD05MMP1

Mitsubishi Electric

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