RD05MMP1 - Silicon RF Power MOS FET
RD05MMP1 Features
* High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
* High Efficiency: 43%min. (941MHz)
* No gate protection diode INDEX MARK [Gate] (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [in
