* 2 For output stage of high power amplifiers in HF band mobile radio sets. 12.3MIN APPLICATION 1.2+/-0.4 0.8+0.10/-0.15 1 2 3 0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 4.5+/-0.5 5deg PIN 1.Gate 2.Source 3.Drain UNIT:mm 9.5MAX ABSOLUTE MAXIMUM RATINGS www.DataSheet4U.com (Tc=25°C UNLESS OTHERWISE NOT
RD06HHF1 Datasheet (571.80 KB)
RD06HHF1
Mitsubishi Electric
571.80 KB
Silicon rf power mos fet.
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HHF1
9.1+/-0.7 1.3+/-0.4 3.6+/-0.2
Silicon MOSFET Power .
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