RD06HHF1 Datasheet, Fet, Mitsubishi Electric

RD06HHF1 Features

• Fet 2 For output stage of high power amplifiers in HF band mobile radio sets. 12.3MIN APPLICATION 1.2+/-0.4 0.8+0.10/-0.15 1 2 3 0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 4.5+/-0.5 5deg PIN 1

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Part number:

RD06HHF1

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Mitsubishi Electric

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📄 Datasheet

Description:

Silicon rf power mos fet. RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING 3.2+/-0.4 4.8MA

RD06HHF1 Application

• Applications OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4
• High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6 FEATURES 2 Fo

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RD06HHF1

Mitsubishi Electric

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