RD0605-D Datasheet, Relays, CARLO GAVAZZI

PDF File Details

Part number:

RD0605-D

Manufacturer:

CARLO GAVAZZI

File Size:

44.17kb

Download:

📄 Datasheet

Description:

Solid state relays. Ordering Key The DC switching relay is used in applications in which there is a need for fast switching of small DC loads with a hi

RD0605-D Application

• Applications in which there is a need for fast switching of small DC loads with a high input/output isolation of more than 4000 VACrms. The DC swit

TAGS

RD0605-D

CARLO GAVAZZI

📁 Related Datasheet

RD06HHF1 - Silicon RF Power MOS FET (Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 9.1+/-0.7 1.3+/-0.4 3.6+/-0.2 Silicon MOSFET Power .

RD06HVF1 - MOS FET type transistor specifically designed for VHF RF power amplifiers applications (Mitsubishi Electric Semiconductor)
.. MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 OUTLINE DRAWING RoHS Complianc.

RD00HHS1 - RoHS Compliance (Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3 1.5+/-0.1 0..

RD00HVS1 - RoHS Compliance (Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 RoHS Complian.

RD0106T - High-Speed Switching Diode (Sanyo Semicon Device)
.DataSheet.co.kr Ordering number : ENA1704 RD0106T SANYO Semiconductors DATA SHEET RD0106T Features • • • • • Diffused Junction Silicon Diode.

RD01MUS1 - Silicon RF Power MOS FET (Mitsubishi Electric)
.. MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9.

RD01MUS2 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
.. MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9.

RD01MUS2B - Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
< Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is.

RD02LUS2 - Silicon RF Power MOS FET (Mitsubishi)
< Silicon RF Power MOS FET (Discrete) > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz, 2W, 3.6V DESCRIPTION RD02LUS2 is a MOS FET .

RD02MUS1 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
.. MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1 0.2+/-0.05 (0.22) (0.22) (0.25).