uc-294 Datasheet | Specifications & PDF Download

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching  AEC-Q101 Qualified (Note1)  Low forward voltage :

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CHA2294 RoHS COMPLIANT 35-40GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2294 is a high gain four-stage mo

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FDS6294 February 2007 FDS6294 tm 30V N-Channel Fast Switching PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed spe

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www.DataSheet4U.com CY7C1292DV18 CY7C1294DV18 9-Mbit QDR- II™ SRAM 2-Word Burst Architecture Features • Separate Independent Read and Write data por

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1N5283-1N5314, 1N7048-1N7055 High-reliability discrete products and engineering services since 1977 CURRENT REGULATOR DIODES FEATURES  Available a

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NCV4294C Voltage Regulator - Low Dropout 30 mA The NCV4294C is a monolithic integrated low dropout voltage regulator with an output current capabilit

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LM2940/LM2940C 1A Low Dropout Regulator March 2000 LM2940/LM2940C 1A Low Dropout Regulator General Description The LM2940/LM2940C positive voltage r

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2N5294 2N5296 2N5298 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5294, 2N5296, and 2N5298 ty

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1N6267 - 1N6303A VBR : 6.8 - 200 Volts PPK : 1500 Watts FEATURES : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedan

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3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th

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www.DataSheet4U.com application INFO available UCC2941-3/-5/-ADJ UCC3941-3/-5/-ADJ 1V Synchronous Boost Converter FEATURES • 1V Input Voltage Opera

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www.DataSheet4U.com UC1681u 68x98RGB CSTN Controller-Driver UC1681u Single-Chip, Ultra-Low Power 68COM x 294SEG Matrix Passive Color LCD Controller-

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Power Transistors 2SC5294, 2SC5294A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High brea

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www.DataSheet4U.com FDZ294N July 2005 FDZ294N N-Channel 2.5 V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced

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MJ21294 NPN Silicon Power Transistor With superior safe operating area performance, this power transistor is ideal for high temperature linear control

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1N3288(A)-1N3297(A) High-reliability discrete products and engineering services since 1977 HIGH POWER RECTIFIERS FEATURES  Available as “HR” (high

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1N5283 THRU 1N5314 SILICON CURRENT LIMITING DIODE DO-35 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5283 serie

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LM2940/LM2940C 1A Low Dropout Regulator March 2000 LM2940/LM2940C 1A Low Dropout Regulator General Description The LM2940/LM2940C positive voltage r

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