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Power Transistors
2SC5294, 2SC5294A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (Ta=25˚C)
Ratings 1500 1600 1500 1600 600 5 30 20 10 120 3.5 150 –55 to +150 Unit
10.0
s Features
φ3.2±0.1 5°
26.5±0.5
3.0±0.3 5°
23.4 22.0±0.5
2.0 1.2
5°
18.6±0.5
5° 5°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to base voltage 2SC5294 2SC5294A 2SC5294 2SC5294A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
4.0 2.0±0.2 1.1±0.1
2.0
0.7±0.1
5.45±0.3
3.3±0.3 0.7±0.1
5.45±0.3
5.5±0.3
V
5°
V
1 2 3
2.