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Transistors
2SC5295J
Silicon NPN epitaxial planar type
0.80±0.05
For 2 GHz band low-noise amplification
1.60+–00..0035 1.00±0.05
Unit: mm
0.12+–00..0013
■ Features
3
(0.375)
0.85–+00..0035 1.60±0.05 5˚
• High transition frequency fT
• Low collector output capacitance (Common base, input open cir-
12
(0.80)
cuited) Cob • SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
0.27±0.02 (0.50)(0.50)
5˚
/ ■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
15
0 to 0.02 0.70–+00..0035
V
0.10 max.
c e.