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2SC5413 - NPN Power Transistors

Datasheet Summary

Features

  • q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCES 1700 V VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current ICP 30 A Collector current IC 20 A Base current IB 10 A Collector power TC=25°C dissipation Ta=25°C.

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Datasheet Details

Part number 2SC5413
Manufacturer Panasonic
File Size 25.73 KB
Description NPN Power Transistors
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Full PDF Text Transcription

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Power Transistors 2SC5413 Silicon NPN triple diffusion mesa type For horizontal deflection output s Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCES 1700 V VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current ICP 30 A Collector current IC 20 A Base current IB 10 A Collector power TC=25°C dissipation Ta=25°C PC 200 W 3.
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