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2SC5442 - Silicon NPN triple diffusion mesa type Power Transistors

Datasheet Summary

Features

  • q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 1500 1500 600 5 20 15 8 100 3.5 Junction temperature Storage.

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Datasheet Details

Part number 2SC5442
Manufacturer Panasonic
File Size 154.85 KB
Description Silicon NPN triple diffusion mesa type Power Transistors
Datasheet download datasheet 2SC5442 Datasheet
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Plhtetap:s//epvaisnita fsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmatiSolo2d0.enr0.±D0i.2p.55DisMcaionnttiennuaendc Power Transistors 2SC5442, 2SC5442A Silicon NPN triple diffusion mesa type For horizontal deflection output s Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 1500 1500 600 5 20 15 8 100 3.
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