* High speed (tf=100ns typ).
* High breakdown voltage (VCBO=1500V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5443] 20.0 3.3 5.0 2.0 1.0 20.7 26.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete
2SC5443
Sanyo
38.53 KB
Npn triple diffused planar silicon transistor.
Ordering number:EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio.
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