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2SC5696

NPN Triple Diffused Planar Silicon Transistor

2SC5696 Features

* Package Dimensions unit : mm 2174A [2SC5696] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 21.0 4.0 2.8 2.0 20.4 0.7 1 2 5.

2SC5696 Datasheet (34.71 KB)

Preview of 2SC5696 PDF

Datasheet Details

Part number:

2SC5696

Manufacturer:

Sanyo

File Size:

34.71 KB

Description:

Npn triple diffused planar silicon transistor.

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2SC5696 NPN Triple Diffused Planar Silicon Transistor Sanyo

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