* Package Dimensions unit : mm 2048B [2SC5723] 6.0 20.0 3.3 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absolute Maximum Rating
2SC5723
Sanyo
27.69 KB
Npn triple diffused planar silicon transistor.
Ordering number : ENN7398
2SC5723
NPN Triple Diffused Planar Silicon Transistor
2SC5723
Ultrahigh-Definition CRT Display Horizontal Deflection Outpu.
📁 Related Datasheet
2SC5720 - NPN TRANSISTOR
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2SC5720
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5720
MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS
· Low Saturation .
2SC5725 - NPN Transistor
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2SC5725
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For DC-DC converter
■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type .
2SC5729 - Medium power transistor
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2SC5729
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Medium power transistor (30V, 0.5A)
2SC5729
zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation .
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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS,
FEATURES . Complementary to 2SA490. • Remended for 10W High-Fidelity .
2SC5700 - NPN TRANSISTOR
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2SC5700
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ADE-208-1435 (Z) Rev.0 Jul. 2001 Features
• High power gain low noise figure at low power o.
2SC5700 - Silicon NPN Transistor
(Renesas)
2SC5700
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Features
• High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF =.
2SC5702 - Silicon NPN Epitaxial Type Transistor
(Renesas)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
2SC5702 - Silicon NPN Transistor
(Hitachi)
2SC5702
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
ADE-208-1414 (Z) 1st. Edition Mar. 2001 Features
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