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2SC5702 - Silicon NPN Epitaxial Type Transistor

2SC5702 Description

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.Th.

2SC5702 Features

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* High gain bandwidth product fT = 8 GHz typ.
* High power gain and low noise figure ; PG = 13 dB typ. , NF = 1.05 dB typ. at f = 900 MHz Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “ZS-”. 2SC5702 Absolute Maximum Ratings (Ta = 25°C)

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Datasheet Details

Part number
2SC5702
Manufacturer
Renesas ↗
File Size
151.85 KB
Datasheet
2SC5702_Renesas.pdf
Description
Silicon NPN Epitaxial Type Transistor

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Silicon NPN Epitaxial Type Transistor Renesas
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