Datasheet4U Logo Datasheet4U.com

2SC5750 - NPN SILICON RF TRANSISTOR

2SC5750 Description

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD .

2SC5750 Features

* Ideal for medium output power amplification
* PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
* HFT3 technology (fT = 12 GHz) adopted
* High reliability through use of gold electrodes
* 4-pin super minimold package ORDERING INFORMATION Pa

📥 Download Datasheet

Preview of 2SC5750 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 2SC5752 - NPN SILICON RF TRANSISTOR (NEC)
  • 2SC5753 - NPN SILICON RF TRANSISTOR (CEL)
  • 2SC5754 - NPN SILICON RF TRANSISTOR (NEC)
  • 2SC5755 - Silicon NPN Epitaxial Type Transistor (Toshiba Semiconductor)
  • 2SC5757 - Silicon NPN Epitaxial Type Transistor (Hitachi Semiconductor)
  • 2SC5758 - Silicon NPN Epitaxial Type Transistor (Hitachi Semiconductor)
  • 2SC5759 - Silicon NPN Epitaxial Type Transistor (Hitachi Semiconductor)
  • 2SC570 - SILICON NPN TRANSISTOR (Toshiba)

📌 All Tags

NPN SILICON TRANSISTOR Renesas
Renesas 2SC5750-like datasheet