Part number:
2SC5750
Manufacturer:
File Size:
131.09 KB
Description:
Npn silicon rf transistor.
* Ideal for medium output power amplification
* PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
* HFT3 technology (fT = 12 GHz) adopted
* High reliability through use of gold electrodes
* 4-pin super minimold package ORDERING INFORMATION Pa
2SC5750
131.09 KB
Npn silicon rf transistor.
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